BUX98 Datasheet, PDF (1/3 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTORS

^£.mi-L,onauctoi
, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUX98 - BUX98A
TELEPHONE: [phone]
[phone]
FAX: [phone]
HIGH POWER NPN SILICON TRANSISTORS
APPLICATIONS
. HIGH FREQUENCY AND EFFICENCY
CONVERTERS
. LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX98 and BUX98A are silicon multiepitaxial
mesa NPN transistor in jedec TO-3 metal case,
intended and industrial applications from single
and three-phase mains operation.
TO-3
(version R)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCER
VCES
VCEO
VEBO
Ic
ICM
ICP
IB
IBM
Plot
Tstg
Tj
Collector-Emitter Voltage (RBE = < 10 H)
Collector-Base Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Collector Peak Current non Rep. (tp < 20 us)
Base Current
Base Peak Current (tp < 5 ms)
Total Power Dissipation at Tease < 25 °C
Storage Temperature
Max Operating Junction Temperature
Value
Unit
BUX98
BUX98A
850
1000
V
850
1000
V
400
450
V
7
V
30
A
60
A
80
A
8
A
30
A
250
W
-65 to 200
°C
200
°C
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notice, Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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