BUX85 Datasheet, PDF (1/2 Pages) Motorola, Inc – 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS

J.E.IIZU
C/
tj
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
SWITCHMODE
NPN Silicon Power Transistors
The BUX85 is designed for high voltage, high speed power
switching applications like converters, inverters, switching regulators,
motor control systems.
Specifications Features:
• VcEO(sus) 450 V
VcES(sus) 1000V
Fall time = 0.3 u.s (typ) at = 1.0 A
vCE(sat) = 1.0 V (max) at TC = 1.0 A, IB = 0.2 A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
— Continuous
— Peak(1)
Base Current
— Continuous
— Peak(1)
Reverse Base Current — Peak
Total Power Dissipation @ TC = 25°C
Derate above 25 °C
Operating and Storage Junction
Temperature Range
Symbol
vCEO(sus)
VCES
VEBO
ic
'CM
IB
IBM
IBM
PD
Tj, Tstg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient
RGJC
RBJA
Maximum Lead Temperature for
TL
Soldering Purpose:
1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle § 10%.
BUX84 BUX85
400
450
800
1000
5
2
3.0
0.75
1.0
1
50
400
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
mW/°C
°C
Max
Unit
2.5
°C/W
62.5
°c/w
275
°c
BUX85
2 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS
50 WATTS
STYLE 1:
PIN1. BASE
2. COLLECTOR
3. EMITTER
2
4. COLLECTOR
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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