BUX66 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

'I.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
High Voltage Silicon
P-N-P Transistors
For High-Speed Switching and
Linear-Amplifier Applications
Features;
• High voltage ratings:
Vceotsus) = -150V max. (BUXB6)
=-150V max. (BUX66A)
= -300 V max. (BUX66B)
• -350 Vmax, (BUX66C)
• Large sale-operating area.
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BUX66, BUX66A, BUX66B, BUX66C
TERMINAL DESIGNATIONS
ttcs-i'ite
JEDEC TO-213AA
The RCA-BUX66, BUX66A, BUX66B, and BUX66C are sil-
icon p-n-p transistors with high breakdown voltages and
fast switching speeds. These transistors are Intended lor a
wide Variety of applications in ac/dc commercial equipment.
Typical applications include high-voltage operational and
linear amplifiers, high-voltage switches, switching regula-
tors, converters, and Inverters.
MAXIMUM RATINGS, Absolute-Maximum Values:
= -1.5V
VCEB(SUS)
R8E= 1
V«0(sus)
VEBO
Upto25°C
Above 85»C, Derate linearly
T,T,,,
TL At distance 1/16 in. (1.58 mm) from
seating plane for 10 s max
BUX66
-200
-200
-175
-150
-6
-2
—5
35
0.2
235
BUX66A
—300
BUX66B
-350
—300
-350
—275
—250
-6o
—5
—1
-325
-300
-6
—2 .
—5
—1
35
35
0.2
0.2
-65 to 200
235
235
BUX66C
—400
-400
-375
V
-350
V
—6
V
-2
A
-5
A
-1
A
35
W
0,2 W/"C
°C
235
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encouragescustomers to verify that datasheets are current before placing orders.
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