BUX47A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUX47A
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VcEoisusr 450V (Min)
• Fast Switching Speed
APPLICATIONS
Designed for high voltage, fast switching applications.
Absolute maximum ratings(Ta=25t:)
SYMBOL
PARAMETER
VCER
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
(VBE= 0)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak tp< 5ms
IB
Base Current-Continuous
IBM
Base Current-peak tp< 5ms
Collector Power Dissipation
PC
@TC=25"C
TI
Junction Temperature
Tsig
Storage Temperature Range
VALUE UNIT
1000
V
900
V
450
V
7
V
9
A
15
A
8
A
10
A
125
W
175
•c
-65-175 •c
i
I
PIN 1.BASE
IY
k*
.!
2- EMITTER
3.COU.ECTOR(CASE)
TO-3 package
(TO-3)
39.5(nax.
20.6 £ max,
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isal _JS?
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*p-0.16
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THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX
1.2
UNIT
r/w
(1.189)
COLLECTOR iS CONNECTED
TO THE CASE
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