BUX39 Datasheet, PDF (1/2 Pages) Seme LAB – HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUX39
25,15(0,99)
26.67(1,05)
10.67 (0.42)
11.10(0.44)
6.3S (0.25)
9.15(0.36)
1.52(0.06)
3.43(0.135)
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HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
FEATURES
• Fast Turn-On Time - 1(is @ lc = 15A
• High Current Capability
3
{case)
384(0151)
4.09(0.1611
7.92 (0312)
1270(050)
TO-204AA (TO-3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
Applications
The BUX39 is an epitaxial silicon NPN planar
transistor that has high current and high power han-
dling capability and high switching speed.
This device is especially suitable for switching-control
amplifiers, power gates, switching regulators, power-
switching circuits converters, inverters and control cir-
cuits.Other recommended applications include
DC-RF amplifiers and power oscillators.
ABSOLUTE MAXIMUM RATINGS (Tra,p = 25°C unless otherwise stated)
VCBO
VCEX
VCER
VCEO(sus)
VEBO
"c
'CM
IB
Plot
Collector - Base Voltage
Collector - Emitter Sustaining Voltage
Collector - Emitter Voltage
Collector - Emitter Sustaining Voltage
Emitter - Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation
Derate above 25°C
@ VBE = -1,5V
@ RBE = 1 0Ofi
120V
120V
110V
90V
7V
30A
40A
6A
120W
0.68 W / °C
Tstg' Tj
TL
Maximum Junction and Storage Temperature Range
Lead Temperature > V32 inch (0.8 mm) for 10 sec. max.
-65 to 100°C
230°C
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