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BUX10 Datasheet, PDF (1/3 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUX10
HIGH POWER NPN SILICON TRANSISTOR
. SGS-THOMSON PREFERRED SALESTYPE
. NPN TRANSISTOR
. HIGH CURRENT CAPABILITY
. FAST SWITCHING SPEED
APPLICATIONS
. MOTOR CONTROL
. LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX10 is a silicon multiepitaxial planar NPN
transistor in Jedec TO-3 metal case, intended for
use in switching and linear applications in military
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ITAB'i
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEX
VCEO
VEBO
Ic
ICM
IB
Plot
Tstg
Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (VBE = - 1.5V)
Collector-emitter Voltage (le = 0)
Emitter-base Voltage (Ic = 0)
Collector Current
Collector Peak Current (tp = 10 rns)
Base Current
Total Power Dissipation at Tcase < 25 °C
Storage Temperature
Max Operating Junction Temperature
Value
160
160
125
7
25
30
5
150
-65 to 200
200
Unit
V
V
V
V
A
A
A
W
°C
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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