BUW36 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,U na.
Silicon NPN Power Transistors
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BUW36
DESCRIPTION
With TO-3 package
High breakdown voltage
APPLICATIONS
For high voltage .fast switching
applications
PINNING (See Fig.2|
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VcBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
Ic
Collector current
I CM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tag
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc 25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
Quality Semi-Conductors
VALUE
900
450
7
10
15
5
125
200
-65-200
UNIT
V
V
V
A
A
A
W
VALUE
I
1.4
UNIT
A/V