BUW35 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

'j.
C7
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN Power Transistors
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BUW35
DESCRIPTION
•With TO-3 package
•High breakdown voltage
APPLICATIONS
•For high voltage ,fast switching
applications
PINNING (SeeFig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
Ic
Collector current
I CM
Collector current-peak
IB
Base current
PT
Total power dissipation
T]
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc<25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
800
400
7
10
15
5
125
200
-65-200
UNIT
V
V
V
A
A
A
W
VALUE
1.4
UNIT
/W
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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