BUW32A Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – HIGH VOLTAGE POWER SWITCH

J.
C/
u
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUW32/32P/32PFI
BUW32A/32AP/32APFI
TELEPHONE: [phone]
[phone]
FAX: [phone]
HIGH VOLTAGE POWER SWITCH
DESCRIPTION
The BUW32/A, BUW32P/AP and BUW32PFI/APFI
are silicon multiepitaxial mesa PNP transistors
mounted respectively in TO-3 metal case, TO-218
plastic package and ISOWATT218 fully isolated
package. They are intended for high voltage, fast
switching and industrial applications.
TO-3
TO-218
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
VCEO
VEBO
lc
IB
Collector-emitter Voltage (VBE = 0)
Collector-emitter Voltage (IB - 0)
Emitter-base Voltage (lc = 0)
Collector Current
Base Current
Ptot Total Power Dissipation at Tc < 25 °C
Tstg Storage Temperature
T, Max. Operating Junction Temperature
ISOWATT218
INTERNAL SHEMATIC DIAGRAM
nC
PNP
BUW
Unit
32/P/PFI
32A/AP/APFI
-400
-450
V
-350
-400
V
-5
-7
V
-10
A
-5
A
TO-3
TO-218 ISOWATT218
125
105
55
W
- 65 to 175-65 to 150 -65 to 150 °C
175
150
150
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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