BUV47 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(9A,400V,90W)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L)n.c.
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
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FAX: [phone]
Rugged Triple-Diffused Planar Construction
9 A Continuous Collector Current
SOT-92 PACKAGE
(TOP VIEW)
1000 Volt Blocking Capability
BC
1
\
CC
tc
3
/
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-emitter voltage (VBE = -2.5 V)
RATING
Collector-emitter voltage (RBE = 10 fi)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1 )
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp < 5 ms, duty cycle < 2%.
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
SYMBOL
VCEX
VCER
VCEO
Ic
'CM
IB
'BM
Ptot
TJ
Ts,g
VALUE
850
1000
850
1000
400
450
9
15
3
6
120
-65to+150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°c
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