BUV41 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
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BUV41
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sat)= 0.8V (Max.) @lc= 3A
• High Switching Speed
APPLICATIONS
• Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25°C)
SYMBOL
PARAMETER
Collector-Emitter Voltage
VCEV
VBE=-1.5V
VCEO ^{Collector-Emitter Voltage}
VEBO ^{Emitter-Base Voltage}
Ic
Collector Current-Continuous
I CM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current- Peak
Collector Power Dissipation
PC
@TC=25"C
Tj
Junction Temperature
Tslg
Storage Temperature Range
VALUE UNIT
300
V
200
V
7
V
15
A
20
A
3
A
5
A
120
W
200
•c
-65-200 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R-th j-c ^{Thermal Resistance, Junction to Case 1 .46 •c/w}
3
I
,Y
'V
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
U
«
1
-»IU- D 2 PL U ^
'••, S*~L^\ i t
*—&_§.—$ G B
t ^*^_^s
t|
•-GE
mm
DIM MIN MAX
A
3300
B 25.30 26.67
i.'
7 .SO 3.30
D
0.90 1 ID
E
1 .40 1 .60
G
ID 92
H
546
K 11. *0 13.50
L
1675 1705
_„,_„„. „„
0 30 00 30 20
V
4 Xi 4 50
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