BUV28 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,200V,80W)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, LJnc.
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FAST NPN SWITCHING TRANSISTOR
high speed transistors suited for low voltage application:
" High Frequency and Efficiency Converters
* Switching Regulators
* Motor Control
FEATURES
* Low Saturation Voltage
* Fast Turn-on and Turn-off
MAXIMUM RATINGS
Characteristic
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current-Continuous
Total Power Dissipation ®TC= 25°C
Derate above 25 °C
w
VCEO
VCBO
VEBO
"c
IB
PD
Operating and Storage Junction
Temperature Range
TJ-TSTG
Rating
200
400
7.0
10
2.0
70
0.56
-65 to +150
Unit
V
V
V
A
A
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
R6jc
Max
1.785
Unit
°c/w
80
270
I60
Q 50
£40
§30
£t
§20
2.10
*<>
0
FIGURE -1 POWER DERATING
\
"X
\
X
\
"\5
Tc , TEMPERATURE(*C)
NPN
BUV28
10 AMPERE
POWER TRANSISTOR
NPN SILICON
200 VOLTS
70 WATTS
TO-220
f^J_
"~^/°
-£$
Jjir
^c
14
L_ ^{1 2 3}
L
E _{'} "} —Q
t
D
[
\i
H^t-
—L
—IF
PIN 1.BASE
2, COLLECTOR
REMOTER
4.COLLECTOft(CASE)
MILLIMETERS
DIM
MIN MAX
A
B
C
D
E
F
G
H
J
K
50L
M
0
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
422
1.14
2.20
0.33
248
3.70
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.98
1.38
2.97
02..5956₇₅
3.90
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