BUV26 Datasheet, PDF (1/3 Pages) STMicroelectronics – MEDIUM POWER NPN SILICON TRANSISTOR

'J.E.iis.u
O'
20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
BUV26
Switchmode Series NPN
Silicon Power Transistor
Designed for high-speed applications,
Features
• Switchmode Power Supplies
• High Frequency Converters
• Relay Drivers
• Driver
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO(sus)
90
Vdc
Collector-Base Voltage
VCBO
180
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current - Continuous
Ic
-Peak (pw 10 ms)
ICM
20
Adc
30
Apk
Base Current - Continuous
IB
4.0
Adc
'BM
6.0
Adc
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 60°C
Operating and Storage Junction
Temperature Range
PD
85
W
PD
65
W
Tj. Tstg -6510+175 ^°c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Case
RSJC
1.76
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TELEPHONE: [phone]
[phone]
FAX: [phone]
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
MARKING
DIAGRAM
TO-220AB
CASE 221A
STYLE 1
BUV26 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
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