BUV18 Datasheet, PDF (1/2 Pages) Seme LAB – NPN HIGH CURENT SWITCHING TRANSISTORS

zSztnL-donauekoi iPioducti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUV18
BUV19
NPN HIGH CURENT
SWITCHING TRANSISTORS
25 15(0.99)
2667(1 05)
1067(042)
11 18(044)
6,35 (0.25)
9,15(036)
Designed for high energy applications
requiring robust fast switching devices
FEATURES
3
(cas.)
792(0312)
1270(0.50)
• Fast Switching
• LowVCE(SAT)
• High Switching Currents
• High Reliability
• Military Options Available
TO-3 (TO-204AE)
Pin 1 - Gate Pin 2- Drain
Case - Source
APPLICATIONS
• High Efficiency Converters
• Motor Drive Control
• Switching Regulator
ABSOLUTE MAXIMUM RATINGS
(Tease = 25°C unless otherwise stated)
VCBO
Collector-Emitter Voltage (IE=0)
VCEO
Collector-Emitter voltage (|B=O)
VEBO
Emitter- Base Voltage (lc=0)
«c
Collector Current
'C(PK)
Peak Collector Current
IB
Base Current
'B(PK)
Peak Base Current
PTOT
Total Dissipation @ Tcase = 25°C
Tstg
Storage Temperature Range
TJ
R9JC
Maximum Operating Junction Temperature
Thermal Resistance Junction - Case
BUV18
BUV19
120V
160V
60V
80V
7V
7V
50A
50A
90A
70A
16A
12A
40A
30A
250W
-65 to 200°C
200°C
Max 0.7°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors