BUT14 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSOSTPRS

^suml-L-onaLietoi Lp\oducts., Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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BUT14
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON T RANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
The BUT14 Darlington transistor is designs d for high-voltage,
high-speed, power switching in Inductive circuits where fall time is
critical. They are particularly suited for line-ope rated switchmode
applications such as:
I
AC and DC Motor Controls
Switching Regulators
o—
Inverters
Solenoid and Relay Drivers
Fast Turn-Off Times
r^hV ^*1n_.^{^}_^» ^. _{i 1 -vw—^-VW-«- '}
* too ' IB e
300 nS Inductive Fall Time at 25°C (Typ)
1 .3 nS Inductive Storage Time at 25°C (Ty_Pi
• Operating Temperature Range -65to200°C
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
- Continuous
- Peakill
Base Current
Continuous
- Peak(l)
Free Wheel Diode:
Forward current - Continuous
• Peak
Total Power Dissipation (8'Tc - 25°C
frTc = 100«C
Derate above 25°C
Operating and Storage Junction
Temperature flange
VCEOlsus)
VCEV
VEB
'c
'CM
'a
IBM
'F
'FM
PD
TJ- Tstg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance.
Junction to Case
ROjC
iMaximum'LBad Temperature
TL
for Soldering Purpose
1:6" from Case for 5 Seconds
111 Pulse Test. Pulse Width - 5 ms. duty Cycle S 10%
BUT14
6°0
860
10
25
35
S
7.5
25
35
175
100
65 to •> 200
Man
1.0
276
Unit
vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W;°C
°C
Unit
°c/w
«c
25 AMPERES
NPN SILICON
POWER DARLINGTON
TRANSISTORS
860 VOLTS
176 WATTS
Designer's Data tor
"Worst Can" Conditions
The Designers Data Sheet permits the
design of most circuits entirely from
the nfotmation presented. Limit dsta
- representing device characteristics
boundaries - are given to facilitate
"worst case" deiign.
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