BUS48 Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON POWER TRANSISTORS

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BUS48
BUS48A
SWITCHMODE IIA SERIES
NPN SILICON POWER TRANSISTORS
The BUS 48 and BUS 48A transistors are designed (or high-
voltage, high-speed, power switching in Inductive circuits where fall
time is critical. They are particularly suited (or line-operated switch-
mode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn-O(( Times
60 ns Inductive Fall Time-2B°C (Typ)
120 ns Inductive Crossover Time -26°C ITyp)
Operating Temperature Range -65 to +20O°C
100°C Performance Specified for:
Reverse-Biased SO A with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents (125"C)
MAXIMUM RATINGS
Rating
Symbol BUS 48 BUS 48A
CollBctor-Emllter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
- Pnkf.1)
— Overload
Gese Current - Continuous
- Peokll)
Total Power Dissipation - TC - 25°C
- TC • 100°C
Derate above 25°C
vCEO(susl
VCEV
VEB
.IIC'O=ML
IB
'BM
PD
Operating and Storage Junction
Temperature flange
Tj.T5,9
400
BSD
460
10OO
7
IB
8
5
20
175
TOO
1.0
-6510 +2OO
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
WVC
°c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance.
Junction to Case
RflJC
1.0
Maximum Lead Temperature
(or Soldering Purposes:
1/8" from Case for 5 Seconds
TL
275
ID Pulse Test: Pulse Width = 5 ms. Duty Cycle £ 10%.
Unit
«c/w
°c
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 ind 450 VOLTS (BVCEO)
BSD - 1000 VOLTS (BVCES)
175 WATTS
Designer's Data for
"Worst Case" Conditions
The Designers4 Data Sheet permits the
design of most circuits entirely from
the Information presented, limit data
- representing device characteristics
boundaries - are given to facilitate
"worst case" design.
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