BUS14 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

^zmi-L-onauctoi U^i
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
usA
Silicon NPNPower Transistors
TELEPHONE: [phone]
[phone]
BUS14
DESCRIPTION
•With TO-3package
•High voltage ,high speed
APPLICATIONS
•Converters
•Inverters
•Switching regulators
•Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VGEO
Collector-emitter voltage
VEBO
Emitter-base voltage
Ic
Collector current
I CM
Collector current-Peak
IB
Base current
IBM
Base current-Peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb=25
MAX
850
400
9
30
50
6
10
250
200
-65-200
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rthj-mb Thermal resistance from junction to mounting base
0.7
/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors