BT136 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Triacs

<SE.mi-Condu.ctoi. LPioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Triacs
TELEPHONE: [phone]
[phone]
FAX: [phone]
BT136 series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling performance. Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
•DRM
'r(RMS)
'TSM
BT136- 500 600 800
BT136- 500F 600F 800F
BT136- 500G 600G 800G
Repetitive peak off-state
500 600 800 V
voltages
RMS on-state current
4
4
4
A
Non-repetitive peak on-state 25 25 25 A
current
PINNING - TO220AB
PIN
DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
PIN CONFIGURATION
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
"DRM
M(RMS)
'TSM
I2t
dlT/dt
'GM
VpGM
~GM
PG(AV)
' stq
Ti
Repetitive peak off-state
-
voltages
RMS on-state current
full sine wave; Tmb < 107 °C
-
Non-repetitive peak
full sine wave; T; = 25 °C prior to
on-state current
surge
t - 20 ms
-
t= 16.7ms
_
I2t for fusing
t = 10ms
-
Repetitive rate of rise of ITM = 6 A; I0 = 0.2 A;
on-state current after
dlG/dt = 0.2 A/us
triggering
T2+G+
-
T2+G-
-
T2-G-
-
T2-G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
-500
5001
MAX.
-600
6001
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/us
A/us
A/us
A/us
A
V
W
W
°C
°C
VI Semi-C ondutlors reserves the right in change tot conditions. paranKter limits ;ind package dimensions \vithotil notice
Information furnished by NJ Scmi-C unductors i» believed to he holh accurate and reliable M the time of going to press. However VI
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