BSX45 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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NPN medium power transistors
BSX45; BSX46; BSX47
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• General industrial applications.
PINNING
PIN
1
2
3
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
DESCRIPTION
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
collector-base voltage
BSX45
open emitter
_
-
80 V
BSX46
-
-
100 V
BSX47
-
-
120 V
VCEO
collector-emitter voltage
BSX45
open base
-
-
40 V
BSX46
-
-
60 V
BSX47
-
-
80 V
ICM
peak collector current
Plot
total power dissipation
Tcase < 25 °C
hFE
DC current gain
lc = 1 00 mA; VCE = 1 V
BSX45-10; BSX46-10; BSX47-10
-
-
1.5 A
-
-
6.25 W
63 100 160
BSX45-16; BSX46-16; BSX47-16
100 160 250
fi
transition frequency
lc = 50 mA; VCE = 10 V; f = 100MHz 50 -
-
MHz
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