BSX20 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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NPN switching transistor
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed saturated switching (and HF amplifier
applications).
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
BSX20
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
Ic
Plot
HFE
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
fT
transition frequency
toff
turn-off time
CONDITIONS
open emitter
open base
Tamb ^ 25 C
lc=10mA; VCE=1 V
lc= 100mA; VCE = 2 V
lc= 10mA; VCE = 10V; f= 100MHz
lCon= 1° mA: 'Bon = 3 mA; lBoff = -1.5 mA
MIN.
-
_
-
-
40
20
500
-
MAX.
40
15
200
360
120
-
-
30
UNIT
V
V
mA
mW
MHz
ns
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