BSW66A Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistors

<Bs.m.i-(,ona\j.ctoi Lpioduct±, Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BSW66A; BSW67A; BSW68A
NPN switching transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
FEATURES
• High current (max. 1A)
• High voltage (max. 150 V).
APPLICATIONS
• General purpose switching and amplification
• Industrial applications.
DESCRIPTION
NPN transistor in a TO-39 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSW66A
BSW67A
BSW68A
VCEO
collector-emitter voltage
BSW66A
BSW67A
BSW68A
Ic
collector current (DC)
Ptot
total power dissipation
HFE
DC current gain
h
transition frequency
toff
turn-off time
CONDITIONS
open emitter
open base
Tcase < 25 °C
lc = 10mA;VCE = 5V
lc = 500 mA; VCE = 5 V
lc = 100 mA; VCE = 20 V; f = 100 MHz
Icon = 500 mA; lBon = 50 mA; lBoff = -50 mA
MIN.
-
-
-
-
-
-
-
-
30
30
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
130
900
MAX. UNIT
100 V
120 V
150 V
100 V
120 V
150 V
1
A
5 1W
-
-
-
MHz
-
ns
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors