BSR52 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN Darlington transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN Darlington transistor
FEATURES
• High current (max. 1A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
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BSR52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCES
VEBO
Ic
'CM
IB
Ptot
Tstg
Tj
'amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
VBE = 0 V
open collector
Tamb < 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
-
-
-
-
-
-
-
I-65
-
-65
MAX.
90
80
5
1
2
100
830
+150
150
+150
UNIT
V
V
V
A
A
mA
mW
°C
°rn*
o/"4
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