BRY39 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Programmable unijunction transistor/ Silicon controlled switch

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Programmable unijunction transistor/
Silicon controlled switch
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BRY39
FEATURES
• Silicon controlled switch
• Programmable unijunction
transistor.
APPLICATIONS
• Switching applications such as:
- Motor control
- Oscillators
- Relay replacement
- Timers
- Pulse shapers, etc.
PINNING
PIN
1
2
3
4
DESCRIPTION
cathode
cathode gate
anode gate (connected to case)
anode
DESCRIPTION
Silicon planar PNPN switch or trigger
device in a TO-72 metal package.
It is an integrated PNP/NPN transistor
pair with all electrodes accessible.
Fig.1 Simplified outline (TO-72) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Silicon controlled switch
CONDITIONS
MAX.
UNIT
PNP TRANSISTOR
VEBO
emitter-base voltage
open collector
-70
V
NPN TRANSISTOR
VCBO
IERM
Ptot
Tj
VAK
IH
ton
U
collector-base voltage
open emitter
70
V
repetitive peak emitter current
-2.5
A
total power dissipation
Tamb < 25 °C
275
mW
junction temperature
150
°C
forward on-state voltage
IA = 50 mA; IA6 = 0; RKG.K = 1 0 kn
1.4
V
holding current
IAG = 10 mA; VBB = -2 V; RKG-K = 10 kn
1
mA
turn-on time
0.25
US
turn-off time
15
US
Programmable unijunction transistor
VGA
gate-anode voltage
IA
anode current (DC)
Ti
junction temperature
IP
peak point current
Tamb < 25 °C
Vs = 10V;RG=10k£2
70
V
175
mA
150
°C
0.2
HA
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