BLX97 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – U.H.F. LINEAR POWER TRANSISTOR

<^>£.mL-(-onauctoi iJ-^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
BLX97
TELEPHONE: [phone]
[phone]
FAX: [phone]
U.H.F. LINEAR POWER TRANSISTOR
N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.n.f. amplifiers for
television transposes and transmitters.
Features:
• guaranteed lowintermodulation figures;
* gold metallization ensures excellent reliability.
The transistor has a !i" capstan envelope with a moulded cap. All leads are isolated from the stud.
QUICK REFERENCE DATA
R.F. performance in linear amplifier
mode of operation
^vision VCE 'C Th dim* ^p"o sync ^*
Gp
MHz
V mA °C
dB
W
dB
class A
class-A
860
25 500 25
-60 > 1.0
> 5,5
860
25 500 25 -60 typ. 1.1
typ. 6,5
* Three-tone test method (vision carrier —8 dB, sound carrier —7 dB, sideband signal —16 dB), zero dB
corresponds to peak sync level.
MECHANICAL DATA
Fig. 1 SOT-48/3.
Dimensions in mm
— — 0,14
Torque on nut: min. 0,75 Nm
(7,5 kg cm)
max. 0,85 Nm
(8,5 kg cm)
Diameter of clearance hole in heatsink: max. 4,2 mm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer or
countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device
is entirely safe provided that the BaO disc is not damaged.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliableat the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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