BLX95 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – U.H.F. POWER TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ZPioducti, {Jnc.
BLX95
TELEPHONE: [phone]
[phone]
FAX: [phone]
U.H.F. POWER TRANSISTOR
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the
u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is
tested under severe load mismatch conditions. Due to a gold metallization excellent reliability proper-
ties have been obtained. The transistor is housed in a capstan envelope with a mpulded cap. All leads
are isolated from the stud.
QUICK REFERENCE DATA
R.F. performance up to Tn = 25 °C in an unneutralized common-emitter class-B circuit
mode of operation _VCE
f
PS
PL
'c
GP
V
V
MHz
W
W
A
dB
%
C.W.
28
470
< 14,2 40 < 2,4 > 4,5
> 60
c.w.
28
175
typ. 3,2 40 typ. 1,9 typ. 1 1
typ. 75
MECHANICAL DATA
Fig. 1 SOT-56.
Dimensions in mm
en:
— ^{— 0.14}
10-32UNF _-r
—|
1,9 __
max
3,0
2.7 " _
„— 11,5 —,. 6,75
10.7
Torque on nut: min.
max.
1,6 Mm
(15 kg cm)
1,7 Nm
(17 kg cm)
Diameter of clearance hole in heatsink: max. 4,9 mm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer
or countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
PRODUCT SAFETY This device Incorporates beryllium oxide, the dust of which Is toxic. The device
is entirely safe provided that the BeO disc is not damaged.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of aoing to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveted in its use. NJ
Semi-Conduetors encourages customers to verify that datasheets are current before placingorders.
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