BLX65E Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – V.H.F./U.H.F. POWER TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ro ducts.,
BLX65E
BLX65ES
TELEPHONE: [phone]
[phone]
FAX: [phone]
V.H.F./U.H.F. POWER TRANSISTORS
N-P-N silicon planar epitaxial transistors in TO-39 envelope designed for use in portable and mobile
radio transmitters in the v.h.f. and u.h.f. bands.
QUICK REFERENCE DATA
R.F. performance at Tc = 25 °C in a common-emitter class-B circuit.
mode of operation
VCE
f
PL
GP
VC
V
MHz
W
dB
%
C.W.; narrow band
12,5
175
2
typ. 16
typ. 68
12,5
470
2
>9
> 55
MECHANICAL DATA
Fig. 1 TO-39/3.
Emitter connected
to case.
Dimensions in mm
*Max. 4,9forBLX65ES.
[max
m8,a5x
.12,7.
mln
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovtfred in its use. NI
Semi-Condiictors «ncourages customers to verify rhat datasheets are current before plncing orders.