BLW98 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF linear power transistor

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20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
UHF linear power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers of TV
transposers and transmitters in band
IV-V, as well as for driver stages in
tube systems.
FEATURES:
• diffused emitter ballasting resistors
for an optimum temperature profile;
• gold sandwich metallization
ensures excellent reliability.
The transistor has a 1/4" capstan
envelope with ceramic cap. All leads
are isolated from the stud.
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BLW98
QUICK REFERENCE DATA
R.F. performance in linear amplifier
MODE OF OPERATION
class-A
class-A
'vision
MHz
860
860
VC6
Ic
Th
dim<1> Po sync ^m
Gp
V
mA
C
dB
W
dB
25
850
70 -60 > 3,5 > 6,5
25
850
25 -60 typ. 4,4 typ. 7,0
Note
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
PINNING-SOT122A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
Fig.1 Simplified outline. SOT122A.
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