BLW96 Datasheet, PDF (1/4 Pages) NXP Semiconductors – HF/VHF power transistor

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HF/VHF power transistor
BLW96
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions. Transistors are supplied
in matched hpE groups.
The transistor has a Vi' flange
envelope with a ceramic cap.All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF
VCE
OPERATION
V
s.s.b. (class-AB)
50
c.w. (class-B)
50
s.s.b. (class-A)
40
Note
1. r|dtat200WP.E.P.
f
MHz
1,6-28
108
28
PL
Gp
11
d3
W
dB
%
dB
25 -200 (P. E. P.) > 13,5 > 40<1> < -30 <
200
typ. 6,5 typ. 67
-
50(P.E.P.) typ. 19
- typ. -40 <
d5
dB
-30
-
-40
'C(ZS)
Oc)
A
0,1
(6)
(4)
PIN CONFIGURATION
PINNING-SOT121B.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline. SOT121 B.
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