BLW91 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – U.H.F. POWER TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Unc.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BLW91
U.H.F. POWER TRANSISTOR
N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and
is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold
sandwich metallization.
The transistor is housed in a V«," capstan envelope with a ceramic cap. All leads are isolated from the
stud.
QUICK REFERENCE DATA
R.F. performance up to Th = 26 °C in an unneutralized common-emitter class-B circuit
de of operation
VCE
V
f
MHz
PwL
GP
dB
%
c.w.
28
470
10
>9
>60
MECHANICAL DATA
Fig.1 SOT122A.
Dimensions in mm
1
1,52
5
— 0,14
t
x metal
8-32UNC
35 -
8,5
-
max~*~
3,25
2,80"*
^ 12,0 ^
11,0
Torque on nut; min. 0,75 Nm
(7,5 kg cm)
max. 0,85 Nm
(8,5 kg cm)
Diameter of clearance hole in heatsink: max. 4,2 mm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer or
countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device
is entirely safe provided that the BeO disc is not damaged.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and packagedimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveYed in its use. Nl
Semi-Conductors encourages customers to verify rhat datasheets are current before pfacing orders.