BLW90 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF power transistor

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UHF power transistor
BLW90
DESCRIPTION
N-P-N silicon planar epitaxial
transistor suitable for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltage of 28 V. The transistor
is resistance stabilized and is
guaranteed to withstand infinite
VSWR at rated output power. High
reliability is ensured by a gold
sandwich metallization.
The transistor is housed in a V4"
capstan envelope with a ceramic cap.
All leads are isolated from the stud.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 "C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
f
PL
Gp
'1
V
MHz
W
dB
%
c.w.
28
470
4
>11
>55
PIN CONFIGURATION
PINNING-SOT122A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
Fig.1 Simplified outline. SOT122A.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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