BLW89 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – U.H.F. POWER TRANSISTOR

QS.IIE.IJ ^zmi-donauckoi ^Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BLW89
U.H.F. POWER TRANSISTOR
N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and
is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold
sandwich metallization,
The transistor is housed in a 14" capstan envelope with a ceramic cap. All leads are isolated from the
stud.
QUICK REFERENCE DATA
R.F. performance up to Tn = 25 °C in an unneutralized common-emitter class-B circuit
mode of operation
VCE
f
V
MHz
P_wL
Gp
dB
c.w.
28
470
2
>12
fl
%
>50
MECHANICAL DATA
Fig.1 SOT122A.
5,9
—(4x)
Dimensions in mm
•0,14
(4x)
j metal
8-32UNC
,BaO
t
f
6,36 -
^ceramic
-- 8,5—*
3.3
-
max"*"
3,25
2,80~*
^ 12.0 ^
11,0
Torque on nut: min. 0,75 Nm
(7,5 kg cm)
max. 0,85 Nm
(8,5 kg cm)
Diameter of clearance hole in heatsink: max. 4,2 mm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer or
countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encouragescustomers to verify rhat datasheets are current before placing orders.
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