BLW86 Datasheet, PDF (1/4 Pages) NXP Semiconductors – HF/VHF power transistor

J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, iJnc.
TELEPHONE: [phone]
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FAX: [phone]
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
hpE groups are available on request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
BLW86
QUICK REFERENCE DATA
R.F. performance up to Th = 25 "C
MODE OF
OPERATION
C.w. (class-B)
s.s.b. (class-AB)
s.s.b. (class-A)
VCE
f
V
MHz
28
175
28 1,6-28
26 1,6-28
PL
w
45
5-47,5 (P.E.P.)
17(PE.P)
Gp
dB
> 7,5
typ. 19
typ. 22
n
%
> 70
typ. 45
-
Zj
0,7+^"J1,3
-
-
YL
mS
110 -J62
-
-
d3
dB
-
typ. -30
typ. -42
PIN CONFIGURATION
PINNING-SOT123
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline and symbol.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
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press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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