BLW85 Datasheet, PDF (1/4 Pages) NXP Semiconductors – HF/VHF power transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
Matched hpE groups are available on
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
BLW85
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION _VCE
V
c.w. (class-B)
12,5
s.s.b. (class-AB)
12,5
f
MHz
175
1 ,6-28
PL
W
45
3-30 (RE. P.)
Gp
dB
> 4,5
typ. 19,5
n
%
> 75
typ. 35
Zi
Q
1.4+J1.6
ZL
d3
D
dB
2,7-j1,3
typ. -33
PIN CONFIGURATION
PINNING-SOT123
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline and symbol.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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