BLW81 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF power transistor

-^dnauator Lpioauoti, Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY07081
U.S.A.
UHF power transistor
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BLW81
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
The transistor is housed in a V4"
capstan envelope with a ceramic cap.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 "C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
V
c.w.
12,5
c.w.
12,5
f
PL
Gp
n
MHz
w
dB
%
470
10
> 6,0 > 60
175
10
typ. 13,5 typ. 60
Zj
ti
1,3+J2,5
1,2- JO,6
YL
mS
150-J66
140-J80
PIN CONFIGURATION
PINNING-SOT122A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information rurnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NI
Semi-Conductors encourages customers to verify rhat datasheets are current before placing orders.