BLW80 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF power transistor

20 STERN AVE
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
UHF power transistor
, iJna.
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BLW80
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
The transistor is housed in a V4"
capstan envelope with a ceramic cap.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-circuit.
MODE OF OPERATION
VCE
V
c.w.
12,5
c.w.
12,5
f
MHz
470
175
PL
GP
n
W
dB
%
4
> 8,0 > 60
4
typ. 15,0 typ. 60
Zi
n
2,1 +J2,3
2,0-j2,2
YL
ms
57-J56
51 -J48
PIN CONFIGURATION
PINNING-SOT122A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use ISII
Semi-Conductors encourages customersto verify that datasheets are current before placing orders.
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