BLW79 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – U.H.F. POWER TRANSISTOR

'JEIISU
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
BLW79
TELEPHONE: [phone]
[phone]
FAX: [phone]
U.H.F. POWER TRANSISTOR
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the
u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the
transistor provides protection against device damage at severe load mismatch conditions.
The transistor is housed in a '/!" capstan envelope with a ceramic cap.
QUICK REFERENCE DATA
R.F. performance up to Tn - 25 °C in an unneutralized common-emitter class-B circuit
mode of operation _VCE
f
PL
V
MHz
w
dB
%
ii
c.w.
12,5
470
2
> 9,0 > 60
3,5 + jO,4
c.w.
12,5
175
2 typ. 13,5 typ. 60
4,2-j3,4
YL
mS
28-J38
25-J24
MECHANICAL DATA
Fig.1 SOT122A.
5,9
* 5,5 r-(4x)
Dimensions in mm
1,52
-^0,14
8-32UNC
/-
*\ 7;
f -pb ^6,35
/ metal
3,25
2,80
12,0
5,6
11,0 ~" max
Torque on nut: min. 0,75 Nm
(7,5 kg cm)
max. 0,85 Nm
(8,5 kg cm)
Diameter of clearance hole in heatsink: max. 4,2 mm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer or
countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of"going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J
Semi-Conductors encourages customers to verify that datasheets are current before placing orders,
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