BLW78 Datasheet, PDF (1/4 Pages) NXP Semiconductors – HF/VHF power transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
HF/VHF power transistor
, Una.
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB or B operated mobile, industrial
and military transmitters in the h.f.
and v.h.f. bands. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions.
It has a 1/2" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BLW78
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
c.w. (class-B)
s.s.b. (class-A)
s.s.b. (class-AB)
Ic
VCE Iqzs)
V
A
28
-
26 3
28 0,05
f
PL
MHz
W
Gp
'1
djd>
dB
%
dB
150 100
>6
> 70
-
28
35(P.E.P.) typ. 19,5
-
typ. -40
28 100(P.E.P.) typ. 19,0 typ. 42 typ. -30
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
PIN CONFIGURATION
PINNING-SOT121B.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline. SOT121B.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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