BLW60C Datasheet, PDF (1/3 Pages) NXP Semiconductors – VHF power transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line,
VHP power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
Matched hFE groups are available on
request.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BLW60C
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
c.w. (class-B)
s.s.b. (class-AB)
Vcc ^f
V MHz
12,5 175
12,5 1 ,6-28
PL
GL
W
dB
45
> 5,0
3-30 (P.E.P.) typ. 19,5
t|
%
> 75
typ. 35
Z|
Q
1.2+J1.4
ZL
Q
2,6-j1,2
d3
dB
typ. -33
PIN CONFIGURATION
PINNING -SOT120A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline. SOT120A.
VI Semi-Conductors reserves the right to change lest conditions, parameter limin ;md package dimensions without notice
Inlbrmntion liimiiheJ by NJ Semi-Conductors a believed tu he both accurate ami reliable ;it the lime uf guing to press. However \
Scini-t. (inductors .bstiincs ini responsibility for my errors or omissions discovered in its use NJ Seini-Condtn.t( rs cm:our:iues
Mi^ti incrs rn \ciih ih;it datasheets ;ire Liirrent before p'nciiojr