BLW34 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF linear power transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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UHF linear power transistor
BLW34
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1/4" capstan
envelope with ceramic cap.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION
class-A; linear amplifier
^vision
MHz
860
860
VCE
Ic
Th
dim<1> ^Pro sync ⁽¹⁾
Gp
V
mA
C dB
w
dB
25
600 70 -60 _{> 1,8} >
9
25
600 25 -60 typ 2,15 typ 10,2
Note
1. Three-tone test method (vision carrier-8 dB, sound carrier-7 dB, sideband signal -16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
PINNING-SOT122A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
Fig.1 Simplified outline. SOT122A.
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