BLW33 Datasheet, PDF (1/3 Pages) NXP Semiconductors – UHF linear power transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i,, Una,
TELEPHONE: [phone]
[phone]
FAX: [phone]
UHF linear power transistor
BLW33
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1/4" capstan
envelope with ceramic cap.
QUICK REFERENCE DATA
MODE OF OPERATION
class-A; linear amplifier
'vision
MHz
860
860
VCE
Ic
Th
dim<1> Po sync ^(*1)'
Gp
V
mA
°C
dB
W
dB
25
300 70 -60 >
1,0 > 10,0
25
300 25 -60 typ. 1,15 typ. 10,5
Note
1. Three-tone test method (vision carrier-8 dB, sound carrier-7 dB, sideband signal -16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
PINNING-SOT122A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top View
MBK1S7
Fig.1 Simplified outline. SOT122A.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors