BLV97CE Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF power transistor

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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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UHF power transistor
BLV97CE
FEATURES
• Internal input matching to achieve high power gain
• Ballasting resistors for an optimum temperature profile
« Gold metallization ensures excellent reliability
DESCRIPTION
NPN silicon planar epitaxial transistor in a SOT171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.
QUICK REFERENCE DATA
RF performance up to Th = 25 °C in a common emitter class-AB circuit
MODE OF OPERATION
c.w. class-AB
f(MHz)
960
VCE(V)
24
PL(W)
35
GP (dB)
>7
lie (%)
> 50
PINNING-SOT171A
PIN
SYMBOL
1
e
2
e
3
b
4
c
5
e
6
e
DESCRIPTION
emitter
emitter
base
collector
emitter
emitter
n² ^⁴in⁶
o
O
ouu
1 35
Top view
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safely
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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