BLV861 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF linear push-pull power transistor

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UHF linear push-pull power transistor
BLV861
FEATURES
• Double stage internal input and output matching
networks for an optimum wideband capability and
high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-AB output stages of television
transmitter amplifiers (sound and vision) operating in
bands 4 and 5 (470 to 860 MHz).
PINNING
PIN SYMBOL
DESCRIPTION
1
c1 collector 1; note 1
2
c2 collector 2; note 1
3
b1 base 1
4
b2 base 2
5
e
common emitters; note 2
Notes
1. Collectors c1 and c2 are internally connected.
2. Common emitters are connected to the flange.
DESCRIPTION
NPN silicon planar epitaxial transistor with two sections in
push-pull configuration. The device is encapsulated in a
SOT289A 4-lead rectangular flange package, with a
ceramic cap.
1nn
±y
b2
3 LJLJ4
Top view
Fig.1 Simplified outline (SOT289A) and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
MODE OF
f
VCE
PL
GP
Tic
AGp
OPERATION
(MHz)
(V)
(W)
(dB)
(%)
(dB)
CW class-AB
860
28
100
>8.5
>55
<1
N.) Semi-Conductors reserves the right in change test conditions, parameter limin and package dimensions xvithoiif notice
Information furrmhei) by NJ Semi-CumJucton it believed to be both accurate nml reliable .it the lime of guing to press. However \
Semi -I oiiJutlurs .bsiimcs no responsibility Cor ;my errors itr oinis.simis Jiscovured in its use \ Seini-C iitidiiitiir* cncourases
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