BLV859 Datasheet, PDF (1/3 Pages) NXP Semiconductors – UHF linear push-pull power transistor

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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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UHF linear push-pull power transistor
BLV859
FEATURES
• Double internal input and output matching for an
optimum wideband capability and high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
PINNING SOT262B
PIN
SYMBOL
1
c1
2
c2
3
b1
4
b2
5
e
DESCRIPTION
collector 1
collector 2
base 1
base 2
emitter
DESCRIPTION
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT262B
4-lead rectangular flange package, with two ceramic caps.
It delivers a P0sync = 20 W in class-A operation at
860 MHz and a supply voltage of 25 V.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Tt, = 25 °C in a common emitter push-pull test circuit.
MODE OF OPERATION
CW class-A
f
(MHz)
860
VCE
'CQ
(V)
(A)
25
2 x 2.25
Note
1. Three-tone test signal (-8, -16 and -10 dB); dim = -54 dB.
PO sync
(W)
>20<1>
GP
(dB)
>100)
N.I .Semi-Coiiduetors reserves the right to change test conditions, parameter limits and package dimensions without notice
Information furnished by NJ Scmi-t onJuctoM ii believed to he holh uccurale ami reliable ill the lime of going to press. However \
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