BLV62 Datasheet, PDF (1/4 Pages) New Jersey Semi-Conductor Products, Inc. – UHF linear push-pull power transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dnc.
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FAX: [phone]
UHF linear push-pull power
transistor
BLV62
FEATURES
• Internal matching for an optimum
wideband capability and high gain
• Poly-silicon emitter-ballasting
resistors for an optimum
temperature profile
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Two npn silicon planar epitaxial
sections in push-pull structure,
intended for use in linear television
transmitters (vision or sound).
The device is encapsulated in a
4-lead SQT262A2 flange envelope
with 2 ceramic caps. The common
emitter is connected to the flange.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
f
VCE
OPERATION (MHz)
(V)
PL
(W)
OP
(dB)
AGp
1c
(%)
(dB)
(note 1)
c.w. class-AB 860
28
150 > 8.5 > 45 < 1
typ. 9.5 typ. 50 typ. 0.5
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain
compression corresponds with 30% sync input/25% sync output
compression in television service (negative modulation, CCIR system).
PIN CONFIGURATION
1
/"I
PINNING - SOT262A2
PIN
DESCRIPTION
1 collector 1
2 collector 2
3 base 1
4 base 2
5 emitter
3
4
Top view
Fig.1 Simplified outline and symbol.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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