BLV59 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF linear power transistor

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UHF linear power transistor
BLV59
FEATURES
« Internal input matching to achieve an optimum
wideband capability and high power gain
• Emitter-ballasting resistors for lower junction
temperatures
• Titanium-platinum-gold metallization ensures long life
and excellent reliability.
APPLICATIONS
• UHF linear amplifiers in television transmitters.
PINNING-SOT171A
PIN
SYMBOL
1
e
2
e
3
b
4
c
5
e
6
e
DESCRIPTION
emitter
emitter
base
collector
emitter
emitter
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a 6-lead SOT171A flange package with a ceramic cap.
All leads are isolated from the flange.
246
O o]
1 35
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter class-AB circuit.
MODE OF OPERATION
CW, class-AB
f
VCE
PL
Gp
Tic
(MHz)
(V)
(W)
(dB)
(%)
860
25
30
>7
>50
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