BLV20 Datasheet, PDF (1/3 Pages) NXP Semiconductors – VHF power transistor

<£s.m.i-(2onau,ctoi \Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
VHP power transistor
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BLV20
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F performance up to Th = 25 °C in an unneutralized common-emitter
class-B circuit
MODE OF _VCE f _PL
OPERATION V MHz W
c.w.
28 175 8
Gp
dB
>12
T1
%
> 65
Z|
Q
1,8+ JO,7
YL
mS
18-J20
PIN CONFIGURATION
PINNING-SOT123
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline and symbol.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
'C(AV)
'CM
Prf
Tstg
T,
max. 65 V
max. 36 V
max.
4V
max. 0,9 A
max. 2,5 A
max. 20 W
-65 to+ 150 "C
max. 200 C
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press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
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