BLV10 Datasheet, PDF (1/4 Pages) NXP Semiconductors – VHF power transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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VHP power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
BLV10
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneautralized common-emitter class-B circuit
MODE OF OPERATION
C.W.
c.w.
VCE
V
13,5
12,5
f
MHz
175
175
PL
GP
n
W
dB
%
8
> 9,0 > 70
8
typ. 10,5 typ. 75
Zj
n
2,8+j1,2
-
YL
mS
76 j16
-
PIN CONFIGURATION
PINNING
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
Fig.1 Simplified outline, SOT123.
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