BLT53 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF power transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
UHF power transistor
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BLT53
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability
• Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT122D
studless envelope with a ceramic cap.
It is designed for common emitter,
class-B operation in portable radio
transmitters in the 470 MHz
communications band. All leads are
isolated from the mounting flange.
PINNING-SOT122D
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
QUICK REFERENCE DATA
RF performance at Tmb = 25 "C in a common emitter test circuit.
MODE OF
OPERATION
c.w. class-B
f
(MHz)
470
VCE
(V)
7.5
PL
(W)
8
GP
(dB)
>6
ilc
(%)
> 60
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveYed in its use. N I
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.