BLF861A Datasheet, PDF (1/2 Pages) Advanced Semiconductor – UHF POWER LDMOS TRANSISTOR

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UHF power LDMOS transistor
BLF861A
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Designed to withstand abrupt load mismatch errors
• Source on underside eliminates DC isolators; reducing
common mode inductance
• Designed for broadband operation (UHF band)
• Internal input and output matching for high gain and
optimum broadband operation.
PINNING - SOT540A
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source connected to flange
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
3
4
Top view
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source 860 MHz test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
GP
(dB)
TlD
{%)
CW, class-AB
860
32
150
>13.5
>50
typ. 14.5
PAL BG (TV); class-AB
860 (ch 69)
32
>150
>14
>40
typ. 170
(peak sync)
Note
1. Sync compression: input sync > 33%; output sync 27%.
AGP
(dB)
<1
note 1
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