BLF278 Datasheet, PDF (1/3 Pages) NXP Semiconductors – VHF push-pull power MOS transistor

^Emi-Conductoi ^Products., One..
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VHP push-pull power MOS transistor
BLF278
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Broadcast transmitters in the VHP frequency range.
PINNING - SOT262A1
PIN
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
DESCRIPTION
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling.
sT^
3
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-B
CW, class-C
CW, class-AB
f
(MHz)
108
108
225
VDS
PL
(V)
(W)
50
300
50
300
50
250
GP
(dB)
>20
typ. 18
>14
typ. 16
TlD
(%)
>60
typ. 80
>50
typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
N.I Semi-t onduclors reserves ih« right to change test conditions, parameter limits ;md package dimensions without notice
Information t'urrmhed by NJ Scmi-t onJuctort it believed to he both accurate and reliable <u the lime at going to press. However \
Vim•(. oiiduUors .bsiunes uu rcvfx.nisibiliiy lor ;my errors «r omissions discovered in its ti.se NJ Seim-t.oiiJtMi r
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